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Full Color Blinking DIP 4.80mm Round High Brightness Light Emitting Diodes LED

DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD

Full Color Blinking DIP 4.80mm Round High Brightness Light Emitting Diodes LED

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Brand Name : DOUBLE LIGHT

Model Number : DL-F48RGBC-B1

Certification : ISO9001:2008/ROHS

Place of Origin : China (mainland)

MOQ : 5,000pcs

Price : US$ 0.05-0.07per unit (Pieces) can be discussed

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability : 2,000,000pcs per Day

Delivery Time : 15 working days after received your payment

Packaging Details : Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms

Product Name : 4.80mm Round Full Color Blinking LED

Package : Dip 4.8mm Round Standard Type LED

Emitted Color : RGB Full Color

Peak Emission Wavelength : Hyper Red:624nm,Pure Green:525nm,Blue:470nm

Lens Type : Water Clear

Forward Voltage @20ma : 3.0-5.0v

Luminous Intensity : Hyper Red:200mcd,Pure Green:350mcd,Blue:150mcd

Viewing Angle : 90 Deg

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Full Color Blinking High Brightness Light Emitting Diodes LED DIP 4.80mm Round

DL-F48RGBC-B1.pdf

This is our DIP 4.80mm Round Full Color Blinking LED, Water Clear Lens and the Emitting Color of this size is RGB full Color.

Features:

  • Single lamp with 3 original colors (red, green and blue).
  • Designed for bonding with LED chip.
  • Triple chips embedded.
  • Multiple colors compose full spectrums.
  • Electricity control IC embedded.
  • Lens size with 5mm / 8mm / 10mm options.
  • High intensity.
  • Viewing Angles: 90°.
  • Fancy, fun, hottest in the market.
  • Operating voltage range: 3.00~5.00V DC.
  • Blinking frequency: 0.07Hz (VDD=4.50V).
  • Frequency tolerance: ± 20%.
  • The product itself will remain within RoHS compliant Version.

Applications:

  • The Hyper Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode.
  • The Pure Green source color devices are made with InGaN on Sapphire substrate Light Emitting Diode.
  • The Blue source color devices are made with InGaN on Sapphire substrate Light Emitting Diode.

Package dimensions:

Part No. Chip Material Lens Color Source Color
DL-F48RGBC-B1 R AlGaInP Water Clear Hyper Red
G InGaN Pure Green
B InGaN Blue

Notes:

1. All dimensions are in millimeters (inches).

2. Tolerance is ± 0.25mm (.010″) unless otherwise noted.

3. Protruded resin under flange is 1.00mm (.039″) max.

4. Specifications are subject to change without notice.

Flash Diagram of One Cycle Time:

Absolute Maximum Ratings at Ta=25℃

Parameters Symbol Max. Unit
Power Dissipation (Per Chip) PD 200 mW

Peak Forward Current

(1/10 Duty Cycle, 0.1ms Pulse Width)

IFP 100 mA
Forward Current IF 40 mA
Derating Linear From 50℃ 0.4 mA/℃
Reverse Voltage VR 5 V
Electrostatic Discharge (HBM) ESD 1000 V
Operating Temperature Range Topr -40℃ to +85℃
Storage Temperature Range Tstg -40℃ to +100℃

Lead Soldering Temperature

[4mm (.157″) From Body]

Tsld 260℃ for 5 Seconds

Electrical Optical Characteristics at Ta=25℃

Parameters Symbol

Emitting

Color

Min. Typ. Max. Unit Test Condition
Luminous Intensity * IV Hyper Red --- 200 --- mcd

VDD=4.50V

(Note 1)

Pure Green --- 350 ---
Blue --- 150 ---
Viewing angle 2θ1/2 --- --- 90 --- Deg

VDD=4.50V

(Note 2)

Peak Emission Wavelength λp Hyper Red --- 632 --- nm VDD=4.50V
Pure Green --- 520 ---
Blue --- 468 ---
Dominant Wavelength λd Hyper Red --- 624 --- nm

VDD=4.50V

(Note 3)

Pure Green --- 525 ---
Blue --- 470 ---
Spectral Line Half-Width △λ Hyper Red --- 20 --- nm

IF=20mA

(Per Chip)

Pure Green --- 35 ---
Blue --- 25 ---
Blinking Frequency F --- --- 0.07 --- Hz VDD=4.50V
Frequency tolerance Fled --- --- ±20% --- Hz VDD=4.50V
Turn On Time Duty --- --- 1/20 ms VDD=4.50V
Operating Voltage VF --- 3.00 4.50 5.00 V
Reverse Current IR --- --- --- 50 µA VR=5V

Notes:

1. Luminous Intensity is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

3. The dominant wavelength (λd) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

4. All specs and applications shown above subject to change without prior notice.

Typical Electrical - Optical Characteristics Curves

(25 Ambient Temperature Unless Otherwise Noted)

Ultra Red:

Pure Green:

Blue:

Reliability Test

Classification Test Item Reference Standard Test Conditions Result

Endurance Test

Operation Life

MIL-STD-750:1026

MIL-STD-883:1005

JIS-C-7021 :B-1

Connect with a power If=20mA

Ta=Under room temperature

Test time=1,000hrs

0/20

High Temperature

High Humidity

Storage

MIL-STD-202:103B

JIS-C-7021 :B-11

Ta=+65℃±5℃

RH=90%-95%

Test time=240hrs

0/20

High Temperature

Storage

MIL-STD-883:1008

JIS-C-7021 :B-10

High Ta=85℃±5℃

Test time=1,000hrs 0/20

0/20

Low Temperature

Storage

JIS-C-7021 :B-12

Low Ta=-35℃±5℃

Test time=1,000hrs

0/20

Environmental Test

Temperature Cycling

MIL-STD-202:107D

MIL-STD-750:1051

MIL-STD-883:1010

JIS-C-7021 :A-4

-35℃ ~ +25℃ ~ +85℃ ~ +25℃

60min 20min 60min 20min

Test Time=5cycle

0/20

Thermal Shock

MIL-STD-202:107D

MIL-STD-750:1051

MIL-STD-883:1011

35℃±5℃ ~+85℃±5℃

20min 20min

Test Time=10cycle

0/20

Solder Resistance

MIL-STD-202:201A

MIL-STD-750:2031

JIS-C-7021 :A-1

Preheating:

140℃-160℃, within 2 minutes.

Operation heating: 235℃ (Max.), within 10seconds (Max.)

0/20

Judgment criteria of failure for the reliability

Measuring items Symbol Measuring conditions Judgment criteria for failure
Forward voltage VF (V) IF=20mA Over Ux1.2
Reverse current IR(uA) VR=5V Over Ux2
Luminous intensity Iv (mcd) IF=20mA Below SX0.5

Notes:

  • U means the upper limit of specified characteristics. S means initial value.
  • Measurement shall be taken between 2 hours and after the test pieces have been returned to normal ambient conditions after completion of each test.

Soldering:

1. Manual of Soldering

The temperature of the iron tip should not be higher than 300℃ (572℉) and Soldering within 3 seconds per solder-land is to be observed.

2. Reflow Soldering

Preheating: 140℃~160℃±5℃, within 2 minutes.

Operation heating: 235℃ (Max.) within 10 seconds (Max)

Gradual Cooling (Avoid quenching).

3. DIP soldering (Wave Soldering):

Preheating: 120℃~150℃, within 120~180 sec.

Operation heating: 245℃±5℃ within 5 sec.260℃ (Max)

Gradual Cooling (Avoid quenching).

Handling :

Care must be taken not to cause to the epoxy resin portion of LEDs while it is exposed to high temperature.

Care must be taken not rub the epoxy resin portion of LEDs with hard or sharp article such as the sand blast and the metal hook.

Notes for designing:

Care must be taken to provide the current limiting resistor in the circuit so as to drive the LEDs within the rated figures. Also, caution should be taken not to overload LEDs with instantaneous voltage at the turning ON and OFF of the circuit.

When using the pulse drive care must be taken to keep the average current within the rated figures. Also, the circuit should be designed so as be subjected to reverse voltage when turning off the LEDs.

Storage:

In order to avoid the absorption of moisture, it is recommended to solder LEDs as soon as possible after unpacking the sealed envelope.

If the envelope is still packed, to store it in the environment as following:

  • Temperature : 5℃-30℃ (41℉), Humidity : RH 60﹪Max.
  • After this bag is opened, devices that will be applied to infrared reflow, vapor-phase reflow, or equivalent soldering process must be:
    • Completed within 24 hours.
    • Stored at less than 30% RH.
  • Devices require baking before mounting, if (2) a or (2) b is not met.
  • If baking is required, devices must be baked under below conditions: 12 hours at 60℃±3℃.

Package and Label of Products:

Products are packed in one bag of 500pcs (one taping reel) and a label is attached on each bag.


Product Tags:

high power light emitting diode

      

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